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1 CGH40006S 6 w, rf power gan hemt, plastic crees CGH40006S is an unmatched, gallium nitride (gan) high electron mobility transistor (hemt). the CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of rf and microwave applications. gan hemts offer high effciency, high gain and wide bandwidth capabilities making the CGH40006S ideal for linear and compressed amplifer circuits. the transistor is available in a 3mm x 3mm, surface mount, quad-fat-no-lead (qfn) package. preliminary r e v 1 . 4 C j u l y 2 0 1 1 features ? up to 6 ghz operation ? 13 db small signal gain at 2.0 ghz ? 11 db small signal gain at 6.0 ghz ? 8 w typical at p in = 32 dbm ? 65 % effciency at p in = 32 dbm ? 28 v operation ? 3mm x 3mm package applications ? 2-way private radio ? broadband amplifers ? cellular infrastructure ? test instrumentation ? class a, ab, linear amplifers suitable for ofdm, w-cdma, edge, cdma waveforms package types: 440203 pns: CGH40006S subject to change without notice. www.cree.com/wireless
2 CGH40006S rev 1.4 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2010-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. absolute maximum ratings (not simultaneous) at 25?c case temperature parameter symbol rating units drain-source voltage v dss 84 volts gate-to-source voltage v gs -10, +2 volts storage temperature t stg -65, +150 ?c operating junction temperature t j 175 ?c maximum forward gate current i gmax 2.1 ma soldering temperature 1 t s 260 ?c thermal resistance, junction to case 2, 3 r jc 10.1 ?c/w case operating temperature 2,3 t c -40, +150 ?c note: 1 refer to the application note on soldering at www.cree.com/products/wireless_appnotes.asp 2 measured for the CGH40006S at p diss = 8 w. 3 t c = case temperature for the device. it refers to the temperature at the ground tab underneath the package. the pcb will add additional thermal resistance. the rth for crees demonstration amplifer, CGH40006S-tb, with 13 (?20 mil) via holes designed on a 20 mil thick rogers 5880 pcb, is 5.1c. the total rth from the heat sink to the junction is 10.1c +5.1c = 15.2 c/w. electrical characteristics (t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold voltage v gs(th) -3.8 -3.3 -2.3 v dc v ds = 10 v, i d = 2.1 ma gate quiescent voltage v gs(q) C -3.0 C v dc v ds = 28 v, i d = 100 ma saturated drain current i ds 1.7 2.1 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v br 120 C C v dc v gs = -8 v, i d = 2.1 ma rf characteristics 2 (t c = 25 ? c, f 0 = 5.8 ghz unless otherwise noted) small signal gain g ss 10 11.8 C db v dd = 28 v, i dq = 100 ma power output at p in = 30 dbm p out 5 6.9 C w v dd = 28 v, i dq = 100 ma drain effciency 3 40 53 C % v dd = 28 v, i dq = 100 ma, p in = 30 dbm output mismatch stress vswr C C 10 : 1 y no damage at all phase angles, v dd = 28 v, i dq = 100 ma, p in = 32 dbm dynamic characteristics input capacitance c gs C 2.7 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz output capacitance c ds C 0.8 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz feedback capacitance c gd C 0.1 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz notes: 1 measured on wafer prior to packaging. 2 measured in crees narrow band production test fxture ad-000291. this fxture is designed for high volume test at 5.8 ghz and may not show the full capability of the device due to source inductance and thermal performance. the demonstration amplifer, CGH40006S-tb, is a better indicator of the true rf performance of the device. 3 drain effciency = p out / p dc
3 CGH40006S rev 1.4 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2010-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical performance small signal gain vs frequency at 28 v of the CGH40006S in the CGH40006S-tb input & output return losses vs frequency at 28 v of the CGH40006S in the CGH40006S-tb 10 12 14 16 gai n ( d b ) s-parameter 0 2 4 6 8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 gai n ( d b ) frequency (ghz) CGH40006S - s21 - 12 -10 -8 -6 -4 -2 0 gai n ( d b ) s-parameter -26 -24 -22 -20 -18 -16 -14 - 12 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 gai n ( d b ) frequency (ghz) CGH40006S - s11 CGH40006S - s22
4 CGH40006S rev 1.4 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2010-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical performance power gain vs output power as a function of frequency of the CGH40006S in the CGH40006S-tb v dd = 28 v, i dq = 100 ma drain effciency vs output power as a function of frequency of the CGH40006S in the CGH40006S-tb v dd = 28 v, i dq = 100 ma 12 14 16 18 20 gai n ( d b ) gain vs. pout 2.0 ghz 3.0 ghz 4.0 ghz 5.0 ghz 6.0 ghz 0 2 4 6 8 10 20 22 24 26 28 30 32 34 36 38 40 gai n ( d b ) output power (dbm) 40% 50% 60% 70% d r ai n ef f i ci en cy eff vs output power 2.0 ghz 3.0 ghz 4.0 ghz 5.0 ghz 6.0 ghz 0% 10% 20% 30% 20 22 24 26 28 30 32 34 36 38 40 d r ai n ef f i ci en cy output power (dbm)
5 CGH40006S rev 1.4 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2010-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical performance power gain vs input power as a function of frequency of the CGH40006S in the CGH40006S-tb v dd = 28 v, i dq = 100 ma drain effciency vs input power as a function of frequency of the CGH40006S in the CGH40006S-tb v dd = 28 v, i dq = 100 ma 8 10 12 14 gai n ( d b ) gain vs input power 0 2 4 6 10 12 14 16 18 20 22 24 26 28 30 32 34 gai n ( d b ) input power (dbm) 2.0 ghz 3.0 ghz 4.0 ghz 5.0 ghz 6.0 ghz 60% 70% 80% 90% 100% d r ai n ef f i ci en cy drain efficiency vs. pin 2.0 ghz 3.0 ghz 4.0 ghz 5.0 ghz 6.0 ghz 0% 10% 20% 30% 40% 50% 10 12 14 16 18 20 22 24 26 28 30 32 34 d r ai n ef f i ci en cy input power (dbm)
6 CGH40006S rev 1.4 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2010-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical performance power gain vs frequency of the CGH40006S in the CGH40006S-tb at p in = 32 dbm, v dd = 28 v output power vs frequency of the CGH40006S in the CGH40006S-tb at p in = 32 dbm, v dd = 28 v drain effciency vs frequency of the CGH40006S in the CGH40006S-tb at p in = 32 dbm, v dd = 28 v 6 7 8 9 10 gai n ( d b ) gain @ pin 32 dbm 0 1 2 3 4 5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 gai n ( d b ) frequency (ghz) 8 10 12 ou t p u t po w er ( w ) power (w) @ pin 32 dbm 0 2 4 6 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 ou t p u t po w er ( w ) frequency (ghz) 40% 50% 60% 70% d r ai n ef f i ci en cy drain efficiency @ pin 32 dbm 0% 10% 20% 30% 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 d r ai n ef f i ci en cy frequency (ghz)
7 CGH40006S rev 1.4 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2010-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical performance third order intermodulation distortion vs average output power as a function of frequency of the CGH40006S in the CGH40006S-tb v dd = 28 v, i dq = 60 ma electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a (> 250 v) jedec jesd22 a114-d charge device model cdm 2 (125 v to 250 v) jedec jesd22 c101-c moisture sensitivity level (msl) classifcation parameter symbol level test methodology moisture sensitivity level msl 3 (168 hours) ipc/jedec j-std-20 -20 -10 0 i m 3 ( d b c) im3 vs total output power 2.0 ghz 3.0 ghz 4.0 ghz 5.0 ghz 6.0 ghz -60 -50 -40 -30 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 i m 3 ( d b c) output power (dbm)
8 CGH40006S rev 1.4 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2010-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical performance simulated maximum available gain and k factor of the CGH40006S v dd = 28 v, i dq = 100 ma note 1. on a 20 mil thick pcb. typical noise performance simulated minimum noise figure and noise resistance vs frequency of the CGH40006S v dd = 28 v, i dq = 100 ma note 1. on a 20 mil thick pcb. minimum noise figure (db) noise resistance (ohms) mag (db) k factor
9 CGH40006S rev 1.4 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2010-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. CGH40006S cw power dissipation de-rating curve note 1. area exceeds maximum case operating temperature (see page 2). source and load impedances frequency (mhz) z source z load 1000 12.7 + j20.2 62.3 + j42 2000 5.98 + j6.81 32.7 + j32.9 3000 3.32 - j2.89 19.2 + j29.8 4000 2.38 - j9.45 15.2 + j15.7 5000 2.62 - j15.6 9.98 + j9.6 6000 1.94 - j21.35 8.51 + j2.07 note 1. v dd = 28v, i dq = 100ma in the 440203 package. note 2. optimized for power gain, p sat and pae. note 3. when using this device at low frequency, series resistors should be used to maintain amplifer stability. note 4. 35 ph source inductance is assumed between the package and rf ground (20 mil thick pcb). d z source z load g s o er d a o au ae eeraure oer dao dera ure a cae oe
10 CGH40006S rev 1.4 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2010-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. CGH40006S-tb demonstration amplifer circuit bill of materials designator description qty r1 res, ain, 0505, 470 ohms (5% tolerance) 1 r2 res, ain, 0505, 50 ohms (5% tolerance) 1 r3 res, ain, 0505, 360 ohms (5% tolerance) 1 c1 cap, 1.3 pf +/-0.1 pf, 0603, atc 600s 1 c2 cap, 2.7 pf +/-0.25 pf, 0603, atc 600s 1 c10 cap, 3.6 pf +/-0.1 pf, 0603, atc 600s 1 c4,c11 cap, 8.2 pf +/-0.25, 0603, atc 600s 2 c6,c13 cap, 470 pf +/-5%, 0603, 100 v 2 c7,c14 cap, 33000 pf, cer, 100v, x7r, 0805 2 c8 cap, 10 uf, 16v, smt, tantalum 1 c15 cap, 1.0 uf +/-10%, cer, 100v, x7r, 1210 1 c16 cap, 33 uf, 100v, elect, fk, smd 1 j3,j4 conn, sma, str, panel, jack, recp 2 j1 header rt>plz .1cen lk 5pos 1 - pcb, ro5880, 0.020 thk 1 q1 CGH40006S 1 CGH40006S-tb demonstration amplifer circuit
11 CGH40006S rev 1.4 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2010-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. CGH40006S-tb demonstration amplifer circuit schematic CGH40006S-tb demonstration amplifer circuit outline
12 CGH40006S rev 1.4 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2010-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical package s-parameters for CGH40006S (small signal, v ds = 28 v, i dq = 100 ma, angle in degrees) frequency mag s11 ang s11 mag s21 ang s21 mag s12 ang s12 mag s22 ang s22 500 mhz 0.933 -92.95 18.74 125.47 0.024 38.02 0.459 -48.87 600 mhz 0.922 -104.26 16.89 118.64 0.026 31.70 0.428 -54.78 700 mhz 0.912 -113.77 15.28 112.75 0.028 26.33 0.402 -59.82 800 mhz 0.905 -121.83 13.90 107.61 0.029 21.71 0.381 -64.21 900 mhz 0.899 -128.73 12.70 103.06 0.030 17.68 0.365 -68.10 1.0 ghz 0.894 -134.72 11.67 98.96 0.030 14.11 0.352 -71.62 1.1 ghz 0.891 -139.97 10.77 95.23 0.030 10.91 0.342 -74.86 1.2 ghz 0.888 -144.62 9.99 91.80 0.031 8.00 0.334 -77.87 1.3 ghz 0.886 -148.78 9.31 88.61 0.031 5.34 0.328 -80.72 1.4 ghz 0.884 -152.55 8.71 85.61 0.031 2.88 0.325 -83.43 1.5 ghz 0.883 -155.97 8.17 82.77 0.031 0.58 0.322 -86.03 1.6 ghz 0.881 -159.12 7.69 80.07 0.031 -1.57 0.321 -88.54 1.7 ghz 0.881 -162.04 7.26 77.49 0.031 -3.60 0.321 -90.98 1.8 ghz 0.880 -164.75 6.88 75.00 0.031 -5.53 0.321 -93.35 1.9 ghz 0.879 -167.29 6.53 72.60 0.031 -7.38 0.323 -95.67 2.0 ghz 0.879 -169.68 6.21 70.26 0.031 -9.14 0.325 -97.94 2.1 ghz 0.879 -171.94 5.92 68.00 0.030 -10.83 0.327 -100.17 2.2 ghz 0.879 -174.09 5.65 65.79 0.030 -12.46 0.330 -102.36 2.3 ghz 0.879 -176.14 5.40 63.62 0.030 -14.03 0.334 -104.51 2.4 ghz 0.879 -178.10 5.18 61.51 0.030 -15.55 0.338 -106.63 2.5 ghz 0.879 -179.98 4.97 59.43 0.030 -17.02 0.342 -108.71 2.6 ghz 0.879 178.20 4.77 57.38 0.029 -18.44 0.346 -110.77 2.7 ghz 0.879 176.44 4.59 55.37 0.029 -19.83 0.351 -112.81 2.8 ghz 0.879 174.74 4.42 53.39 0.029 -21.18 0.355 -114.82 2.9 ghz 0.879 173.09 4.26 51.43 0.029 -22.48 0.360 -116.80 3.0 ghz 0.880 171.49 4.11 49.50 0.028 -23.76 0.366 -118.76 3.2 ghz 0.880 168.39 3.84 45.70 0.028 -26.20 0.376 -122.63 3.4 ghz 0.881 165.43 3.60 41.97 0.027 -28.51 0.387 -126.41 3.6 ghz 0.882 162.57 3.38 38.31 0.026 -30.70 0.399 -130.13 3.8 ghz 0.883 159.81 3.19 34.71 0.025 -32.75 0.410 -133.78 4.0 ghz 0.884 157.13 3.01 31.16 0.025 -34.68 0.422 -137.38 4.2 ghz 0.885 154.52 2.85 27.65 0.024 -36.47 0.433 -140.91 4.4 ghz 0.887 151.96 2.71 24.19 0.023 -38.12 0.445 -144.40 4.6 ghz 0.888 149.45 2.57 20.77 0.022 -39.63 0.457 -147.84 4.8 ghz 0.889 146.98 2.45 17.38 0.022 -40.97 0.468 -151.24 5.0 ghz 0.890 144.55 2.33 14.03 0.021 -42.15 0.480 -154.60 5.2 ghz 0.892 142.15 2.23 10.71 0.020 -43.15 0.491 -157.92 5.4 ghz 0.893 139.78 2.13 7.41 0.019 -43.95 0.503 -161.20 5.6 ghz 0.894 137.43 2.04 4.15 0.018 -44.53 0.514 -164.45 5.8 ghz 0.896 135.11 1.95 0.91 0.018 -44.89 0.525 -167.66 6.0 ghz 0.897 132.80 1.87 -2.30 0.017 -45.00 0.535 -170.85 note 1. download this s-parameter fle in .s2p format at http://www.cree.com/products/wireless_s-parameters.asp note 2. on a 20 mil thick pcb.
13 CGH40006S rev 1.4 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2010-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. product dimensions CGH40006S (package type 440203) pin input/output 1 gnd 2 rf in 3 gnd 4 gnd 5 rf out 6 gnd
14 CGH40006S rev 1.4 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2010-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. tape & reel dimensions
15 CGH40006S rev 1.4 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2010-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. for more information, please contact: cree, inc. 4600 silicon drive durham, nc 27703 www.cree.com/wireless ryan baker marketing cree, wireless devices 919.407.7816 tom dekker sales director cree, wireless devices 919.407.5639

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